Fundamentals of Semiconductor Lasers III

Nonselective oxidation of GaAs-based III-V compound semiconductor heterostructures for in-plane semiconductor lasers

A nonselective wet thermal oxidation technique for AlGaAs-containing heterostructures has been shown to enable the fabrication of a variety of novel high-efficiency, high-power GaAs-based in-plane laser devices. Applied in conjunction with a deep anisotropic dry etch, nonselective oxidation yields a simple, self-aligned high-index-contrast (HIC) ridge waveguide (RWG) structure. The native oxide...

Fundamentals of Power Semiconductor Devices

Power Supply and Current Modulation Circuits for Semiconductor Lasers

Design and construction of a stable current supply with protection circuits are described. The reported circuit provides a high-stable and high-level current variable from 0.5-1.2 A with the protect ion circuits to prevent over load current, voltage and off-range temperature operation. A detailed analysis of the circuit parameters is given and the time behaviors of the load voltage/current and ...

Semiconductor nanowire lasers

| The discovery and continued development of the laser has revolutionized both science and industry. The advent of miniaturized, semiconductor lasers has made this technology an integral part of everyday life. Exciting research continues with a new focus on nanowire lasers because of their great potential in the field of optoelectronics. In this Review, we explore the latest advancements in the...

Semiconductor snail lasers

M. J. Strain, G. Mezősi, J. Javaloyes, M. Sorel, A. Pérez-Serrano, A. Scirè, S. Balle, J. Danckaert, and G. Verschaffelt Department of E&EE, University of Glasgow, Glasgow G12 8LT, United Kingdom IFISC, UIB-CSIC, Campus UIB, E-07122 Palma de Mallorca, Spain IMEDEA, C/Miquel Marqués, 21; E-07190 Esporles, Spain Department of Applied Physics and Photonics, Vrije Universiteit Brussel, Pleinlaan 2,...